High-Performance Silicon Nanowire Gate-All-Around nMOSFETs Fabricated on Bulk Substrate Using CMOS-Compatible Process
- 25 October 2010
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 31 (12), 1377-1379
- https://doi.org/10.1109/led.2010.2080256
Abstract
In this letter, a novel self-aligned CMOS-compatible method for the fabrication of gate-all-around silicon nanowire MOSFETs (GAA SNWFETs) on bulk substrate has been proposed. The fabricated SNWFET featuring 33-nm gate length and 7-nm diameter shows the highest driving current (Ion = 2500 μA/μm at Vds = Vgs = 1.0 V) among previously reported data and achieves high Ion/Ioff ratio of 105, lightening the promise for high performance and strong scalability of GAA SNWFETs. The process details and optimization procedure are extensively discussed.Keywords
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