Performance breakthrough in 8 nm gate length Gate-All-Around nanowire transistors using metallic nanowire contacts
- 1 June 2008
- conference paper
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
Parasitic S/D resistances in extremely scaled GAA nanowire devices can pathologically limit the device drive current performance. We demonstrate for the first time, that S/D extension dopant profile engineering together with successful integration of low resistivity metallic nanowire contacts greatly reduces parasitic resistances. This allows 8 nm gate length GAA nanowire devices in this work to attain record-high drive currents of 3740 muA/mum.Keywords
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