Nickel Salicided Source/Drain Extensions for Performance Improvement in Ultrascaled (Sub 10 nm) Si-Nanowire Transistors
- 6 January 2009
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 30 (2), 195-197
- https://doi.org/10.1109/led.2009.2010532
Abstract
This letter demonstrates successful integration of Gate-All-Around (GAA) nanowire (NW) transistors with low-resistivity metallic NW point contacts at source/drain extensions. Ultrascaled GAA silicon NW transistors with gate lengths down to 8 nm have been achieved, exhibiting good performance among the NW FETs reported to date. Compared to the reference devices, the metallic contact NW devices show 580% enhancement in I ON from 103 to 705 muA/mum , at a fixed I OFF of 10 nA/mum . Nickel silicide resistivity for ultrathin films is also investigated in this letter for the integration of salicided source/drain extensions with the GAA NW process. Experimental results show that 4 nm of deposited Ni is suitable for forming NW contacts with 10-nm diameters, which is thin enough to avoid oversilicidation while meeting the low-resistivity requirements.Keywords
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