High-Performance Twin Silicon Nanowire MOSFET (TSNWFET) on Bulk Si Wafer
- 14 March 2008
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nanotechnology
- Vol. 7 (2), 181-184
- https://doi.org/10.1109/tnano.2008.917843
Abstract
A gate-all-around (GAA) twin silicon nanowire MOSFET (TSNWFET) with 5-nm-radius channels on a bulk Si wafer is successfully fabricated to achieve extremely high-drive currents of 2.37 mA/ mum for n-channel and 1.30 mA/ mum for p-channel TSNWFETs with mid-gap TiN metal gate that are normalized by a nanowire diameter. It also shows good short-channel effects immunity down to 30-nm gate length due to the GAA structure and the nanowire channel. The effect of bottom parasitic transistor in TSNWFET is also investigated.Keywords
This publication has 9 references indexed in Scilit:
- Design optimization of gate-all-around (GAA) MOSFETsIEEE Transactions on Nanotechnology, 2006
- High performance 5nm radius Twin Silicon Nanowire MOSFET (TSNWFET) : fabrication on bulk si wafer, characteristics, and reliabilityPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2006
- Transistor Performance Scaling: The Role of Virtual Source Velocity and Its Mobility DependencePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2006
- Sub-25nm single-metal gate CMOS multi-bridge-channel MOSFET (MBCFET) for high performance and low power applicationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- A computational study of ballistic silicon nanowire transistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2004
- 5nm-gate nanowire FinFETPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2004
- High Performance Silicon Nanowire Field Effect TransistorsNano Letters, 2003
- FinFET-a self-aligned double-gate MOSFET scalable to 20 nmIEEE Transactions on Electron Devices, 2000
- Semiconductor thickness effects in the double-gate SOI MOSFETIEEE Transactions on Electron Devices, 1998