Characterization of Leakage and Reliability of SiNx Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs
- 1 September 2015
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 62 (10), 3215-3222
- https://doi.org/10.1109/ted.2015.2469716
Abstract
In this paper, we systematically investigated the leakage and breakdown mechanisms of the low-pressure chemical vapor deposition (LPCVD) silicon nitride thin film deposited on AlGaN/GaN heterostructures. The LPCVD-SiN x gate dielectric exhibits low leakage and high breakdown electric field. The dominant mechanism of the leakage current through LPCVD-SiN x gate dielectric is identified to be Poole-Frenkel emission at low electric field and Fowler-Nordheim tunneling at high electric field. Both electric-field-accelerated and temperature-accelerated time-dependent dielectric breakdown of the LPCVD-SiN x gate dielectric were also investigated.Keywords
Funding Information
- Innovation and Technology Commission (ITS/192/14FP)
- Research Grants Council, University Grants Committee, Hong Kong (HKUST636/13)
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