Identification of the (√E+1/E)-dependence of porous low-k time dependent dielectric breakdown using over one year long package level tests
- 26 March 2013
- journal article
- Published by Elsevier BV in Microelectronic Engineering
- Vol. 109, 90-93
- https://doi.org/10.1016/j.mee.2013.03.085
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Time dependent dielectric breakdown physics – Models revisitedMicroelectronics Reliability, 2012
- Direct observation of the 1/E dependence of time dependent dielectric breakdown in the presence of copperApplied Physics Letters, 2011
- Copper-Line Topology Impact on the Reliability of SiOCH Low-$k$ for the 45-nm Technology Node and BeyondIEEE Transactions on Device and Materials Reliability, 2009
- A model for electric degradation of interconnect low-k dielectrics in microelectronic integrated circuitsJournal of Applied Physics, 2009
- Simple model for time-dependent dielectric breakdown in inter- and intralevel low-k dielectricsJournal of Applied Physics, 2005
- Prediction of dielectric reliability from I–V characteristics: Poole–Frenkel conduction mechanism leading to √E model for silicon nitride MIM capacitorMicroelectronics Reliability, 2004