O3-sourced atomic layer deposition of high quality Al2O3 gate dielectric for normally-off GaN metal-insulator-semiconductor high-electron-mobility transistors
- 19 January 2015
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 106 (3), 033507
- https://doi.org/10.1063/1.4906601
Abstract
High quality Al2O3 film grown by atomic layer deposition (ALD), with ozone (O3) as oxygen source, is demonstrated for fabrication of normally-off AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs). Significant suppression of Al–O–H and Al–Al bonds in ALD-Al2O3 has been realized by substituting conventional H2O source with O3. A high dielectric breakdown E-field of 8.5 MV/cm and good TDDB behavior are achieved in a gate dielectric stack consisting of 13-nm O3-Al2O3 and 2-nm H2O-Al2O3 interfacial layer on recessed GaN. By using this 15-nm gate dielectric and a high-temperature gate-recess technique, the density of positive bulk/interface charges in normally-off AlGaN/GaN MIS-HEMTs is remarkably suppressed to as low as 0.9 × 1012 cm−2, contributing to the realization of normally-off operation with a high threshold voltage of +1.6 V and a low specific ON-resistance RON,sp of 0.49 mΩ cm2.Keywords
Funding Information
- National Natural Science Foundation of China (61474138)
- Research Grants Council, University Grants Committee, Hong Kong (ITS/192/14FP)
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