Direct observation of the 1/E dependence of time dependent dielectric breakdown in the presence of copper
- 17 January 2011
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 98 (3), 032107
- https://doi.org/10.1063/1.3543850
Abstract
Time dependent dielectric breakdown (TDDB) lifetime model study has been performed on a metal-insulator-semiconductor capacitor structure with copper directly deposited on silicon dioxide without a barrier material. The structure generates a low electric field acceleration of time-to-failure, which makes it possible to measure TDDB over a wide range of electric fields from 3.5 to 10 MV/cm and experimentally validate TDDB lifetime model without any assumption and data extrapolation. The experimental results are in good agreement with the so called model and do not support the , , or power-law model.
Keywords
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