Al2O3/AlN/GaN MOS-Channel-HEMTs With an AlN Interfacial Layer
- 29 May 2014
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 35 (7), 723-725
- https://doi.org/10.1109/led.2014.2322379
Abstract
We report a high-performance normally-off Al 2 O 3 /AlN/GaN MOS-channel-high electron mobility transistor (MOSC-HEMT) featuring a monocrystalline AlN interfacial layer inserted between the amorphous Al 2 O 3 gate dielectric and the GaN channel. The AlN interfacial layer effectively blocks oxygen from the GaN surface and prevents the formation of detrimental Ga-O bonds. Frequency-dispersion in C – V characteristics and threshold voltage hysteresis are effectively suppressed, owing to improved interface quality. The new MOSC-HEMTs exhibit a maximum drain current of 660 mA/mm, a field-effect mobility of 165 cm \(^{2}\) /V \(\cdot \) s, a high on/off drain current ratio of \(\sim 10^{10}\) , and low dynamic on-resistance degradation.
Keywords
Funding Information
- Hong Kong Research Grant Council (611512, N_HKUST636/13)
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