Time dependent dielectric breakdown physics – Models revisited
- 1 September 2012
- journal article
- Published by Elsevier BV in Microelectronics Reliability
- Vol. 52 (9-10), 1753-1760
- https://doi.org/10.1016/j.microrel.2012.06.007
Abstract
No abstract availableThis publication has 21 references indexed in Scilit:
- Neutral self-defects in a silica model: A first-principles studyPhysical Review B, 2005
- Trends in the ultimate breakdown strength of high dielectric-constant materialsIEEE Transactions on Electron Devices, 2003
- Thermodynamic properties of the Si–SiO2 systemThe Journal of Chemical Physics, 2002
- Asymmetry and long-range character of lattice deformation by neutral oxygen vacancy in α-quartzPhysical Review B, 2002
- Defect generation and breakdown of ultrathin silicon dioxide induced by substrate hot-hole injectionJournal of Applied Physics, 2001
- Validity of the bond-energy picture for the energetics atinterfacesPhysical Review B, 2000
- Energetics of silicon suboxidesPhysical Review B, 2000
- The silicon-silicon dioxide system: Its microstructure and imperfectionsReports on Progress in Physics, 1994
- Temperature acceleration of time-dependent dielectric breakdownIEEE Transactions on Electron Devices, 1989
- Model for theCenter in SiPhysical Review Letters, 1970