Pure Blue Laser Diodes Based on Nonpolar m-Plane Gallium Nitride with InGaN Waveguiding Layers
- 1 September 2007
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 46 (9L), L820
- https://doi.org/10.1143/jjap.46.l820
Abstract
Blue laser diodes (LDs) based on m-plane gallium nitride were demonstrated by using m-plane GaN substrates. The lasing wavelength and the threshold current under pulsed operation were 451.8 nm and 134 mA (22.3 kA/cm2), respectively. The device structures consisted of InGaN-based multi-quantum wells, InGaN guiding layers, and Al-containing cladding layers. The InGaN guiding layers play two roles; as appropriate optical waveguides for longer lasing wavelengths and for the prevention of macroscopic cracks parallel to the c-plane. The latter is an indispensable technology in order to fabricate nonpolar LDs for longer wavelengths beyond the blue region.Keywords
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