AlGaN-Cladding-Free Nonpolar InGaN/GaN Laser Diodes
- 23 March 2007
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 46 (4L), L284
- https://doi.org/10.1143/jjap.46.l284
Abstract
We demonstrate highly manufacturable nonpolar (m-plane) InGaN/GaN laser diodes without any Al-containing waveguide cladding layers. These devices utilize thick InGaN quantum wells to generate transverse optical mode confinement and can be grown and fabricated in a manner analogous to InGaN/GaN light emitting diodes. Pulsed lasing operation was demonstrated, with threshold voltages and current densities of 6.7 V and 3.7 kA/cm2, respectively.Keywords
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