Semipolar (1011) InGaN/GaN Laser Diodes on Bulk GaN Substrates
- 1 May 2007
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 46 (5L), L444-445
- https://doi.org/10.1143/jjap.46.l444
Abstract
The first semipolar nitride laser diodes (LDs) have been realized on low extended defect density semipolar (1011) GaN bulk substrates. The LDs were grown by conventional metal organic chemical vapor deposition (MOCVD). Broad area lasers were fabricated and tested under pulsed conditions. Lasing was observed at a duty cycle of 0.025% with a threshold current density (Jth) of 18 kA/cm2. Stimulated emission was observed at 405.9 nm with a full width at half maximum (FWHM) of less than 0.3 nm.Keywords
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