Blue, Green, and Amber InGaN/GaN Light-Emitting Diodes on Semipolar {11-22} GaN Bulk Substrates
- 30 June 2006
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 45 (7L), L659
- https://doi.org/10.1143/jjap.45.l659
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Characterization of Planar Semipolar Gallium Nitride Films on Sapphire SubstratesJapanese Journal of Applied Physics, 2006
- Demonstration of a semipolar (101¯3¯) InGaN∕GaN green light emitting diodeApplied Physics Letters, 2005
- Milliwatt Power Blue InGaN/GaN Light-Emitting Diodes on Semipolar GaN TemplatesJapanese Journal of Applied Physics, 2005
- Characterization of Planar Semipolar Gallium Nitride Films on Spinel SubstratesJapanese Journal of Applied Physics, 2005
- GaN growth on (30&3macr;8) 4H‐SiC substrate for reduction of internal polarizationphysica status solidi (c), 2005
- Efficient radiative recombination from ⟨112¯2⟩ -oriented InxGa1−xN multiple quantum wells fabricated by the regrowth techniqueApplied Physics Letters, 2004
- Visible light-emitting diodes using a-plane GaN–InGaN multiple quantum wells over r-plane sapphireApplied Physics Letters, 2004
- Crystal orientation effects on electronic properties of wurtzite InGaN/GaN quantum wellsJournal of Applied Physics, 2002
- Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum WellsJapanese Journal of Applied Physics, 2000
- Free-carrier screening of polarization fields in wurtzite GaN/InGaN laser structuresApplied Physics Letters, 1999