Demonstration of high power blue-green light emitting diode on semipolar (112̄2) bulk GaN substrate

Abstract

Blue-green InGaN/GaN multiple-quantum-well light emitting diodes with peak emission wavelength of 480 nm were grown on low extended defect density semipolar (112̄2) bulk GaN substrates by conventional metal organic chemical vapour deposition. The calculated external quantum efficiency and output power at a drive current of 20 mA under pulsed operations (10% duty cycle) were 18% and 9 mW, respectively. The device exhibited small electroluminescence wavelength shift (4.5 nm) with drive currents ranging from 30 to 100 mA, indicating significant reduction of polarisation-related internal electric fields.