High Brightness Violet InGaN/GaN Light Emitting Diodes on Semipolar (101̄1̄) Bulk GaN Substrates
- 1 February 2007
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 46 (2L), L129-131
- https://doi.org/10.1143/jjap.46.l129
Abstract
We report the fabrication of violet InGaN/GaN light-emitting diodes (LEDs) on semipolar (1011) GaN bulk substrates. The LEDs have a dimension of 300 ×300 µm2 and are packaged in an epoxy resin. The output power and external quantum efficiency (EQE) at a driving current of 20 mA were 20.58 mW and 33.91% respectively, with peak electroluminescence (EL) emission wavelength at 411 nm. The LEDs show minimal shift in peak EL wavelength with increasing drive current along with a high EQE.Keywords
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