Worst-case bias during total dose irradiation of SOI transistors
- 1 December 2000
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 47 (6), 2183-2188
- https://doi.org/10.1109/23.903751
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
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