Two-dimensional simulation of total dose effects on NMOSFET with lateral parasitic transistor
- 1 December 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 43 (6), 2651-2658
- https://doi.org/10.1109/23.556849
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
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