TCAD-assisted analysis of back-channel leakage in irradiated mesa SOI nMOSFETs
- 1 December 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 45 (6), 2593-2599
- https://doi.org/10.1109/23.736502
Abstract
No abstract availableThis publication has 19 references indexed in Scilit:
- SEU critical charge and sensitive area in a submicron CMOS technologyIEEE Transactions on Nuclear Science, 1997
- Quantitative model of radiation induced charge trapping in SiO/sub 2/IEEE Transactions on Nuclear Science, 1997
- Two-dimensional simulation of total dose effects on NMOSFET with lateral parasitic transistorIEEE Transactions on Nuclear Science, 1996
- A two-dimensional numerical simulation of oxide charge buildup in MOS transistors due to radiationIEEE Transactions on Electron Devices, 1994
- A simulation of the multiple trapping model for continuous time random walk transportJournal of Applied Physics, 1993
- A numerical simulation of hole and electron trapping due to radiation in silicon dioxideJournal of Applied Physics, 1991
- Silicon-on-Insulator TechnologyPublished by Springer Science and Business Media LLC ,1991
- Modeling the anneal of radiation-induced trapped holes in a varying thermal environmentIEEE Transactions on Nuclear Science, 1990
- Photocurrent modeling at high dose ratesIEEE Transactions on Nuclear Science, 1989
- Saturation of Threshold Voltage Shift in MOSFET's at High Total DoseIEEE Transactions on Nuclear Science, 1986