Total dose induced latch in short channel NMOS/SOI transistors
- 1 December 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 45 (6), 2458-2466
- https://doi.org/10.1109/23.736486
Abstract
No abstract availableThis publication has 28 references indexed in Scilit:
- Effect of Total Dose Radiation on Device Self Latch-UpPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- SOI: materials to systemsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A scalable SOI technology for three successive generations: 0.18, 0.13 and 0.1 μm for low-voltage and low-power applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- High performance submicron SOI devices with silicon film thickness below 50 nmPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Radiation induced charge in SIMOX buried oxides: lack of thickness dependence at low applied fieldsIEEE Transactions on Nuclear Science, 1997
- Total dose hardening of SIMOX buried oxides for fully depleted devices in rad-tolerant applicationsIEEE Transactions on Nuclear Science, 1996
- Trapping-detrapping properties of irradiated ultra-thin SIMOX buried oxidesIEEE Transactions on Nuclear Science, 1995
- CMOS scaling for high performance and low power-the next ten yearsProceedings of the IEEE, 1995
- Evidence of negative charge trapping in high temperature annealed thermal oxideIEEE Transactions on Nuclear Science, 1994
- Scaling the Si MOSFET: from bulk to SOI to bulkIEEE Transactions on Electron Devices, 1992