Improving the Light Extraction Efficiency of GaN-Based Light-Emitting Diode
Open Access
- 1 January 2021
- journal article
- research article
- Published by Scientific Research Publishing, Inc. in World Journal of Engineering and Technology
- Vol. 09 (02), 300-308
- https://doi.org/10.4236/wjet.2021.92021
Abstract
The light extraction efficiency caused by total internal reflection is low. Based on the analysis of the existing technology, a new design scheme is proposed in this paper to improve the light extraction efficiency. The air gap photonic crystal is embedded on the GaN-based patterned sapphire substrate, which can reduce line misalignment and improve light extraction efficiency. The internal structure of the GaN-based LED epitaxial layer is composed of an electron emission layer, a quantum well in the light-emitting recombination region, and an electron blocking layer. Experimental results show that this method significantly improves the extraction efficiency of LED light.Keywords
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