III-nitride photonic-crystal light-emitting diodes with high extraction efficiency
Top Cited Papers
- 22 February 2009
- journal article
- Published by Springer Science and Business Media LLC in Nature Photonics
- Vol. 3 (3), 163-169
- https://doi.org/10.1038/nphoton.2009.21
Abstract
No abstract availableKeywords
This publication has 30 references indexed in Scilit:
- Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200A∕cm2Applied Physics Letters, 2007
- Status and Future of High-Power Light-Emitting Diodes for Solid-State LightingJournal of Display Technology, 2007
- High performance thin-film flip-chip InGaN–GaN light-emitting diodesApplied Physics Letters, 2006
- High brightness LEDs for general lighting applications Using the new ThinGaN™-Technologyphysica status solidi (a), 2004
- High-power AlGaInN flip-chip light-emitting diodesApplied Physics Letters, 2001
- Is the light emitting diode (LED) an ultimate lamp?American Journal of Physics, 2000
- High Extraction Efficiency of Spontaneous Emission from Slabs of Photonic CrystalsPhysical Review Letters, 1997
- Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodesApplied Physics Letters, 1994
- Inhibited Spontaneous Emission in Solid-State Physics and ElectronicsPhysical Review Letters, 1987
- Resonance Absorption by Nuclear Magnetic Moments in a SolidPhysical Review B, 1946