Enhancement of the light output power of InGaN/GaN light-emitting diodes grown on pyramidal patterned sapphire substrates in the micro- and nanoscale
- 1 January 2008
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 103 (1)
- https://doi.org/10.1063/1.2830981
Abstract
No abstract availableKeywords
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