Performance enhancement of blue light-emitting diodes without an electron-blocking layer by using special designed p-type doped InGaN barriers.
- 1 January 2012
- journal article
- Published by Optica Publishing Group in Optics Express
- Vol. 20 (1), A133-A140
- https://doi.org/10.1364/oe.20.00a133
Abstract
In this study, the characteristics of the nitride-based blue light-emitting diode (LED) without an electron-blocking layer (EBL) are analyzed numerically. The emission spectra, carrier concentrations in the quantum wells (QWs), energy band diagrams, electrostatic fields, and internal quantum efficiency (IQE) are investigated. The simulation results indicate that the LED without an EBL has a better hole-injection efficiency and smaller electrostatic fields in its active region over the conventional LED with an AlGaN EBL. The simulation results also show that the LED without an EBL has severe efficiency droop. However, when the special designed p-type doped InGaN QW barriers are used, the efficiency droop is markedly improved and the electroluminescence (EL) emission intensity is greatly enhanced which is due to the improvement of the hole uniformity in the active region and small electron leakage.This publication has 28 references indexed in Scilit:
- Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodesSolid-State Electronics, 2010
- Internal efficiency of InGaN light-emitting diodes: Beyond a quasiequilibrium modelApplied Physics Letters, 2010
- Improvement in output power of a 460 nm InGaN light-emitting diode using staggered quantum wellJournal of Applied Physics, 2010
- Efficiency droop in nitride‐based light‐emitting diodesPhysica Status Solidi (a), 2010
- Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droopApplied Physics Letters, 2008
- Carrier distribution in (0001)InGaN∕GaN multiple quantum well light-emitting diodesApplied Physics Letters, 2008
- Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200A∕cm2Applied Physics Letters, 2007
- Efficiency droop behaviors of InGaN∕GaN multiple-quantum-well light-emitting diodes with varying quantum well thicknessApplied Physics Letters, 2007
- Origin of efficiency droop in GaN-based light-emitting diodesApplied Physics Letters, 2007
- Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum WellsJapanese Journal of Applied Physics, 1997