Improved crystal quality and performance of GaN-based light-emitting diodes by decreasing the slanted angle of patterned sapphire
- 1 February 2010
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 96 (5)
- https://doi.org/10.1063/1.3304004
Abstract
No abstract availableThis publication has 18 references indexed in Scilit:
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