High performance of GaN thin films grown on sapphire substrates coated with a silica-submicron-sphere monolayer film
- 10 March 2008
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 92 (10)
- https://doi.org/10.1063/1.2891067
Abstract
A high-performance, GaN-based light emitting diode (LED) was prepared using a metal organic chemical vapor deposition method on a silica-sphere, monolayer-coated sapphire substrate. Various surface coverage ratios of the silica submicron spheres with diameters ranging from 300to550nm were deposited on the sapphire substrate using a spin-coating method. The LED output power was increased 2.5-fold compared with the LED constructed without silica spheres and uniform light distribution was achieved. In addition, LED output power was dependent on silica-sphere size and surface coverage of the substrates.This publication has 16 references indexed in Scilit:
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