High Current Density Esaki Tunnel Diodes Based on GaSb-InAsSb Heterostructure Nanowires
- 13 September 2011
- journal article
- research article
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 11 (10), 4222-4226
- https://doi.org/10.1021/nl202180b
Abstract
We present electrical characterization of broken gap GaSb-InAsSb nanowire heterojunctions. Esaki diode characteristics with maximum reverse current of 1750 kA/cm2 at 0.50 V, maximum peak current of 67 kA/cm2 at 0.11 V, and peak-to-valley ratio (PVR) of 2.1 are obtained at room temperature. The reverse current density is comparable to that of state-of-the-art tunnel diodes based on heavily doped p-n junctions. However, the GaSb-InAsSb diodes investigated in this work do not rely on heavy doping, which permits studies of transport mechanisms in simple transistor structures processed with high-κ gate dielectrics and top-gates. Such processing results in devices with improved PVR (3.5) and stability of the electrical properties.This publication has 21 references indexed in Scilit:
- Tunnel field-effect transistor using InAs nanowire/Si heterojunctionApplied Physics Letters, 2011
- Si–InAs heterojunction Esaki tunnel diodes with high current densitiesApplied Physics Letters, 2010
- $\hbox{In}_{0.7}\hbox{Ga}_{0.3}\hbox{As}$ Tunneling Field-Effect Transistors With an $I_{\rm on}$ of 50 $\mu\hbox{A}/\mu\hbox{m}$ and a Subthreshold Swing of 86 mV/dec Using $\hbox{HfO}_{2}$ Gate OxideIEEE Electron Device Letters, 2010
- InAs/GaSb Heterostructure Nanowires for Tunnel Field-Effect TransistorsNano Letters, 2010
- Modeling of High-Performance p-Type III–V Heterojunction Tunnel FETsIEEE Electron Device Letters, 2010
- Practical Strategies for Power-Efficient Computing TechnologiesProceedings of the IEEE, 2010
- Complementary Silicon-Based Heterostructure Tunnel-FETs With High Tunnel RatesIEEE Electron Device Letters, 2008
- Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/decIEEE Electron Device Letters, 2007
- Band-to-Band Tunneling in Carbon Nanotube Field-Effect TransistorsPhysical Review Letters, 2004
- Experimental observation of negative differential resistance from an InAs/GaSb interfaceApplied Physics Letters, 1990