$\hbox{In}_{0.7}\hbox{Ga}_{0.3}\hbox{As}$ Tunneling Field-Effect Transistors With an $I_{\rm on}$ of 50 $\mu\hbox{A}/\mu\hbox{m}$ and a Subthreshold Swing of 86 mV/dec Using $\hbox{HfO}_{2}$ Gate Oxide
- 18 October 2010
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 31 (12), 1392-1394
- https://doi.org/10.1109/led.2010.2074178
Abstract
Vertical In0.7Ga0.3As tunneling field-effect transistors are demonstrated with a high on-current of 50 μA / μm (in comparison to reported values) and a minimum subthreshold swing (SS) of 86 mV/dec using atomic-layer-deposited HfO2 gate oxide. The tunneling diodes exhibit the gate-bias-dependent Esaki diode behavior with a negative differential resistance under the forward diode bias at various temperatures, which confirms that the conduction mechanism is, indeed, band-to-band tunneling. The effects of equivalent oxide thickness scaling and various temperatures on the on-current and the SS are also investigated.Keywords
This publication has 12 references indexed in Scilit:
- Effects of gate-first and gate-last process on interface quality of In0.53Ga0.47As metal-oxide-semiconductor capacitors using atomic-layer-deposited Al2O3 and HfO2 oxidesApplied Physics Letters, 2009
- Tunneling Field-Effect Transistor: Effect of Strain and Temperature on Tunneling CurrentIEEE Electron Device Letters, 2009
- Double-Gate Strained-Ge Heterostructure Tunneling FET (TFET) With record high drive currents and ≪60mV/dec subthreshold slopePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2008
- Compound Semiconductor as CMOS Channel Material: Déjà vu or New Paradigm?Published by Institute of Electrical and Electronics Engineers (IEEE) ,2008
- Low-voltage green transistor using ultra shallow junction and hetero-tunnelingPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2008
- The Tunnel Source (PNPN) n-MOSFET: A Novel High Performance TransistorIEEE Transactions on Electron Devices, 2008
- Device physics and guiding principles for the design of double-gate tunneling field effect transistor with silicon-germanium source heterojunctionApplied Physics Letters, 2007
- Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/decIEEE Electron Device Letters, 2007
- Double-Gate Tunnel FET With High-$\kappa$ Gate DielectricIEEE Transactions on Electron Devices, 2007
- Low-subthreshold-swing tunnel transistorsIEEE Electron Device Letters, 2006