Si–InAs heterojunction Esaki tunnel diodes with high current densities
- 18 October 2010
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 97 (16)
- https://doi.org/10.1063/1.3499365
Abstract
Si-InAs heterojunction p-n diodes were fabricated by growing InAs nanowires in oxide mask openings on silicon substrates. At substrate doping concentrations of 1 x 10(16) and 1 x 10(19) cm(-3), conventional diode characteristics were obtained, from which a valence band offset between Si and InAs of 130 meV was extracted. For a substrate doping of 4 x 10(19) cm(-3), heterojunction tunnel diode characteristics were obtained showing current densities in the range of 50 kA/cm(2) at 0.5 V reverse bias. In addition, in situ doping of the InAs wires was performed using disilane to further boost the tunnel currents up to 100 kA/cm(2) at 0.5 V reverse bias for the highest doping ratios. (C) 2010 American Institute of Physics. [doi:10.1063/1.3499365]Keywords
This publication has 16 references indexed in Scilit:
- Practical Strategies for Power-Efficient Computing TechnologiesProceedings of the IEEE, 2010
- Direct Heteroepitaxy of Vertical InAs Nanowires on Si Substrates for Broad Band Photovoltaics and PhotodetectionNano Letters, 2009
- Controlled III/V Nanowire Growth by Selective-Area Vapor-Phase EpitaxyJournal of the Electrochemical Society, 2009
- Complementary Silicon-Based Heterostructure Tunnel-FETs With High Tunnel RatesIEEE Electron Device Letters, 2008
- Control of InAs Nanowire Growth Directions on SiNano Letters, 2008
- Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/decIEEE Electron Device Letters, 2007
- New Technique for Fabrication of Two-Dimensional Photonic Bandgap Crystals by Selective EpitaxyJapanese Journal of Applied Physics, 1997
- Selective area metalorganic chemical vapor deposition growth for hexagonal-facet lasersJournal of Crystal Growth, 1994
- Proposal for Surface Tunnel TransistorsJapanese Journal of Applied Physics, 1992
- Subband spectroscopy by surface channel tunnelingSurface Science, 1978