Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec
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- 23 July 2007
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 28 (8), 743-745
- https://doi.org/10.1109/led.2007.901273
Abstract
We have demonstrated a 70-nm n-channel tunneling field-effect transistor (TFET) which has a subthreshold swing (SS) of 52.8 mV/dec at room temperature. It is the first experimental result that shows a sub-60-mV/dec SS in the silicon-based TFETs. Based on simulation results, the gate oxide and silicon-on-insulator layer thicknesses were scaled down to 2 and 70 nm, respectively. However, the ON/ OFF current ratio of the TFET was still lower than that of the MOSFET. In order to increase the on current further, the following approaches can be considered: reduction of effective gate oxide thickness, increase in the steepness of the gradient of the source to channel doping profile, and utilization of a lower bandgap channel materialThis publication has 11 references indexed in Scilit:
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