Modeling of High-Performance p-Type III–V Heterojunction Tunnel FETs
- 4 March 2010
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 31 (4), 305-307
- https://doi.org/10.1109/led.2010.2041180
Abstract
The impact of band lineup and source doping concentration on the performance of heterojunction tunnel FETs (H-TFETs) with type-II heterointerface is investigated by simulations. Exemplarily, H-TFETs based on InAs/AlxGa1-xSb heterostructures are studied. Varying the Al content x, the band lineup can be adjusted from staggered to broken. We find that a staggered band lineup and a medium source doping concentration yield the best ON/OFF-state performance in terms of an inverse subthreshold slope that is smaller than 60 mV/dec and fT values in the terahertz range.Keywords
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