Charge-Plasma Based Process Variation Immune Junctionless Transistor
- 14 January 2014
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 35 (3), 411-413
- https://doi.org/10.1109/led.2013.2297451
Abstract
In this letter, we report for the first time a distinctive approach of implementing a junctionless transistor (JLT) without doping (doping-less) the ultrathin silicon film. A charge-plasma concept is employed to induce n-region for the formation of source and drain for a n-channel JLT using appropriate metal work function electrodes. Electrical characteristics of the proposed device are simulated and compared with that of a conventionally doped JLT of identical dimensions. In conventional JLTs, the channel doping concentration is generally kept high to ensure high ON-state current, but it causes variation in threshold voltage, which may be due to process variations. The proposed device solves the problem of threshold voltage variability without affecting inherent advantages of JLTs.This publication has 16 references indexed in Scilit:
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