Fabrication and Characterization of the Charge-Plasma Diode
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- 19 April 2010
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 31 (6), 528-530
- https://doi.org/10.1109/led.2010.2045731
Abstract
We present a new lateral Schottky-based rectifier called the charge-plasma diode realized on ultrathin silicon-on-insulator. The device utilizes the workfunction difference between two metal contacts, palladium and erbium, and the silicon body. We demonstrate that the proposed device provides a low and constant reverse leakage-current density of about 1 fA/μm with ON/OFF current ratios of around 107 at 1-V forward bias and room temperature. In the forward mode, a current swing of 88 mV/dec is obtained, which is reduced to 68 mV/dec by back-gate biasing.Keywords
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