Surface-Potential-Based Drain Current Model for Long-Channel Junctionless Double-Gate MOSFETs

18 October 2012

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 59 (12), 3292-3298
https://doi.org/10.1109/ted.2012.2221164

Abstract

A surface-potential-based model is developed for the symmetric long-channel junctionless double-gate MOSFET. The relationships between surface potential and gate voltage are derived from some effective approximations to Poisson's equation for deep depletion, partial depletion, and accumulation conditions. Then, the Pao-Sah integral is carried out to obtain the drain current. It is shown that the model is in good agreement with numerical simulations from subthreshold to saturation region. Finally, we discuss the strengths and limitations (i.e., threshold voltage shifts) of the JLFET, which has been recently proposed as a promising candidate for the JFET.

Keywords

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