The Charge Plasma P-N Diode
Top Cited Papers
- 21 November 2008
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 29 (12), 1367-1369
- https://doi.org/10.1109/led.2008.2006864
Abstract
A simulation study on a new rectifier concept is presented. This device basically consists of two gates with different workfunctions on top of a thin intrinsic or lowly doped silicon body. The workfunctions and layer thicknesses are chosen such that an electron plasma is formed on one side of the silicon body and a hole plasma on the other, i.e., a charge plasma p-n diode is formed in which no doping is required. Simulation results reveal a good rectifying behavior for well-chosen gate workfunctions and device dimensions. This concept could be applied for other semiconductor devices and materials as well in which doping is an issue.Keywords
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