Low subthreshold slope in junctionless multigate transistors
- 8 March 2010
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 96 (10)
- https://doi.org/10.1063/1.3358131
Abstract
The improvement of subthreshold slope due to impact ionization is compared between “standard” inversion-mode multigate silicon nanowire transistors and junctionless transistors. The length of the region over which impact ionization takes place, as well as the amplitude of the impact ionization rate are found to be larger in the junctionless devices, which reduces the drain voltage necessary to obtain a sharp subthreshold slope.Keywords
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