100-nm n-/p-channel I-MOS using a novel self-aligned structure
- 21 March 2005
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 26 (4), 261-263
- https://doi.org/10.1109/led.2005.844695
Abstract
We have fabricated a 100-nm n-/p-channel I-MOS by adopting a novel structure. The proposed structure shows some advantages over the conventional one in terms of self-alignment and reduced number of photolithography masks. It leads to low fabrication cost, accelerated scaling down, and enhanced performance due to reduced parasitic elements. It shows a normal transistor operation with small subthreshold swing less than 11.8 mV/dec at room temperature. The n- and p-channel I-MOS have an ON/OFF current of 81.1/2.8 and 78.2/3.4 /spl mu/A per /spl mu/m, respectively. The device performance provides a promise for near-ideal switch application.Keywords
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