Correction to "Revision of Tunneling Field-Effect Transistor in Standard CMOS Technologies"
- 26 March 2007
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 28 (4), 315
- https://doi.org/10.1109/led.2007.893272
Abstract
Previously published results by the authors, from 2004 to 2006, on the tunneling field-effect transistor (TFET) are revised in this correction. The devices that they had characterized as TFETs contain a conducting path in parallel to the intended tunneling junction. Therefore, the measured characteristics are similar to a MOSFET with a resistive source connectionKeywords
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