Submicron scaling of HBTs
- 1 November 2001
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 48 (11), 2606-2624
- https://doi.org/10.1109/16.960387
Abstract
The variation of heterojunction bipolar transistor (HBT) bandwidth with scaling is reviewed. High bandwidths are obtained by thinning the base and collector layers, increasing emitter current density, decreasing emitter contact resistivity, and reducing the emitter and collector junction widths. In mesa HBTs, minimum dimensions required for the base contact impose a minimum width for the collector junction, frustrating device scaling. Narrow collector junctions can be obtained by using substrate transfer or collector-undercut processes or, if contact resistivity is greatly reduced, by reducing the width of the base ohmic contacts in a mesa structure. HBTs with submicron collector junctions exhibit extremely high f/sub max/ and high gains in mm-wave ICs. Transferred-substrate HBTs have obtained 21 dB unilateral power gain at 100 GHz. If extrapolated at -20 dB/decade, the power gain cutoff frequency f/sub max/ is 1.1 THz. f/sub max/ will be less than 1 THz if unmodeled electron transport physics produce a >20 dB/decade variation in power gain at frequencies above 110 GHz. Transferred-substrate HBTs have obtained 295 GHz f/sub T/. The substrate transfer process provides microstrip interconnects on a low-/spl epsiv//sub r/ polymer dielectric with a electroplated gold ground plane. Important wiring parasitics, including wiring capacitance, and ground via inductance are substantially reduced. Demonstrated ICs include lumped and distributed amplifiers with bandwidths to 85 GHz and per-stage gain-bandwidth products over 400 GHz, and master-slave latches operating at 75 GHz.This publication has 42 references indexed in Scilit:
- Laterally etched undercut (LEU) technique to reduce base-collector capacitances in heterojunction bipolar transistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- 185 GHz monolithic amplifier in InGaAs-InAlAs transferred-substrate HBT technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Single-stage G-band HBT amplifier with 6.3 dB gain at 175 GHzPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Broadband HBT amplifiersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- CANTILEVERED BASE InP DHBT FOR HIGH SPEED DIGITAL APPLICATIONSInternational Journal of High Speed Electronics and Systems, 2001
- Small-scaled InGaP/GaAs HBTs with WSi/Ti base electrode and buried SiO/sub 2/IEEE Transactions on Electron Devices, 1998
- Ultrahigh-Speed InP/InGaAs Double-Heterostructure Bipolar Transistors and Analyses of Their OperationJapanese Journal of Applied Physics, 1996
- High-performance low-base-collector capacitance AlGaAs/GaAs heterojunction bipolar transistors fabricated by deep ion implantationIEEE Electron Device Letters, 1995
- High-f/sub max/ AlGaAs/InGaAs and AlGaAs/GaAs HBT's with p/sup +//p regrown base contactsIEEE Transactions on Electron Devices, 1995
- Bias dependence of GaAs and InP MESFET parametersIEEE Transactions on Electron Devices, 1977