Single-stage G-band HBT amplifier with 6.3 dB gain at 175 GHz
- 13 November 2002
- conference paper
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
We report a single-stage tuned amplifier that exhibits a peak small signal gain of 6.3 dB at 175 GHz. The amplifier was designed in a transferred-substrate InP-based HBT technology that has exhibited record values of extrapolated f/sub max/. The gain-per-stage of the amplifier is amongst the highest reported in any transistor technology in this frequency band.Keywords
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