Broadband HBT amplifiers

11 November 2002

conference paper
conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 6-10
https://doi.org/10.1109/cornel.2000.902510

Abstract

We report wide-band amplifiers using AlInAs/GaInAs transferred-substrate Heterojunction Bipolar Transistors (HBTs). A distributed amplifier exhibits 11.5 dB gain and 80 GHz bandwidth. Lumped amplifiers exhibit 8.2 dB gain with 80 GHz bandwidth and 18 dB gain with 50 GHz bandwidth and 400 GHz gain-bandwidth product, record for a single-stage amplifier.

Keywords

HETEROJUNCTION BIPOLAR TRANSISTORS
BROADBAND AMPLIFIERS
BANDWIDTH
DISTRIBUTED AMPLIFIERS
CAPACITANCE
GAIN
TRANSCONDUCTANCE
MIRRORS
GEOMETRY
WIDEBAND

This publication has 2 references indexed in Scilit:

80-GHz distributed amplifiers with transferred-substrate heterojunction bipolar transistors
IEEE Transactions on Microwave Theory and Techniques, 1998
A new wide-band Darlington amplifier
IEEE Journal of Solid-State Circuits, 1989

Cited by 6 articles