Laterally etched undercut (LEU) technique to reduce base-collector capacitances in heterojunction bipolar transistors
- 19 November 2002
- conference paper
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 167-170
- https://doi.org/10.1109/gaas.1995.528986
Abstract
We report a novel fabrication process aimed at reducing the parasitic junction capacitance of AlGaAs-GaAs heterojunction bipolar transistors. The process, named as the Laterally Etched Undercut (LEU) process, physically removes the extrinsic base-collector junction area and results in a cantilever structure. The DC, small-signal, and large-signal performances of the LEU devices are compared to those obtained from the conventional devices.Keywords
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