High extraction efficiency InGaN micro-ring light-emitting diodes
- 24 November 2003
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 83 (22), 4483-4485
- https://doi.org/10.1063/1.1630352
Abstract
Light-emitting diodes (LEDs) based on an interconnected array of GaN/InGaN micro-ring elements have been demonstrated. The devices have electrical characteristics similar to those of conventional broad-area devices. However, due to the large surface areas provided by the sidewalls, the extraction efficiency is greatly enhanced. Intense light emission at the periphery of the micro-rings is observed upon excitation by an electron beam, suggesting scattering of the photons which are extracted through the sidewalls. The devices provide a doubling in total light output compared to a broad-area reference LED of equal light-generation area.This publication has 12 references indexed in Scilit:
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