Raman determination of phonon deformation potentials in α-GaN
- 31 October 1996
- journal article
- Published by Elsevier BV in Solid State Communications
- Vol. 100 (4), 207-210
- https://doi.org/10.1016/0038-1098(96)00410-3
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Fabrication and Characterization of NdBaCuO-Josephson Junctions on MgO-Substrates Damaged by a Focused Ion BeamJapanese Journal of Applied Physics, 1996
- Valence-band physics and the optical properties of GaN epilayers grown onto sapphire with wurtzite symmetryPhysical Review B, 1995
- Investigation of longitudinal-optical phonon-plasmon coupled modes in highly conducting bulk GaNApplied Physics Letters, 1995
- Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodesApplied Physics Letters, 1994
- Thermal Annealing Effects on P-Type Mg-Doped GaN FilmsJapanese Journal of Applied Physics, 1992
- Raman scattering and x-ray-absorption spectroscopy in gallium nitride under high pressurePhysical Review B, 1992
- Photoluminescence of Mg-doped p-type GaN and electroluminescence of GaN p-n junction LEDJournal of Luminescence, 1991
- P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)Japanese Journal of Applied Physics, 1989
- Piezospectroscopic study of the Raman spectrum of cadmium sulfidePhysical Review B, 1976