Comparison of optical transitions in InGaN quantum well structures and microdisks
- 1 May 2001
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 89 (9), 4951-4954
- https://doi.org/10.1063/1.1355280
Abstract
No abstract availableThis publication has 22 references indexed in Scilit:
- Piezoelectric effects on the optical properties of GaN/AlxGa1−xN multiple quantum wellsApplied Physics Letters, 1998
- Collective effects of interface roughness and alloy disorder in InxGa1−xN/GaN multiple quantum wellsApplied Physics Letters, 1998
- Optical properties of GaN/AlGaN multiple quantum well microdisksApplied Physics Letters, 1997
- Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum WellsJapanese Journal of Applied Physics, 1997
- Optical Properties of Strained AlGaN and GaInN on GaNJapanese Journal of Applied Physics, 1997
- Photonic-Wire LaserPhysical Review Letters, 1995
- Observation of laser oscillation without population inversion in InGaAsP microdisk lasersSolid State Communications, 1994
- Room temperature operation of submicrometre radius disk laserElectronics Letters, 1993
- Room temperature operation of microdisc lasers with submilliamp threshold currentElectronics Letters, 1992
- Whispering-gallery mode microdisk lasersApplied Physics Letters, 1992