Investigation of Sidewall Recombination in GaN Using a Quantum Well Probe
- 1 January 2000
- journal article
- Published by Springer Science and Business Media LLC in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Electrical and optical characteristics of etch induced damage in InGaAsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1998
- Diode Lasers and Photonic Integrated CircuitsOptical Engineering, 1997
- Dry etching damage in III–V semiconductorsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996