Development of Ultrahigh-Voltage SiC Devices
Top Cited Papers
- 29 September 2014
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 62 (2), 396-404
- https://doi.org/10.1109/ted.2014.2357812
Abstract
Ultrahigh-voltage silicon carbide (SiC) devices [p-i-n diodes and insulated-gate bipolar transistors (IGBTs)] and switching test have been investigated. As a result, we have succeeded in developing a 13-kV p-i-n diode, 15-kV p-channel IGBT, and 16-kV flip-type n-channel implantation and epitaxial IGBT with a low differential specific on-resistance ( R $_{\rm diff,on}$ ). It was revealed that a power module fabricated using a nanotech resin, Si 3 N 4 ceramic substrate, and W base plate was suitable for ultrahigh voltage and high temperature. A switching test was carried out using a clamped inductive load circuit, which indicated that the energy loss of a circuit with ultrahigh-voltage SiC devices is lower than that of Si devices.Keywords
Funding Information
- Japan Society for the Promotion of Science through the First Program entitled Funding Program for World-Leading Innovative Research and Development on Science and Technology
- Joint Research Project, Tsukuba Power Electronics Constellations, Tsukuba, Japan
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