13-kV, 20-A 4H-SiC PiN Diodes for Power System Applications
- 1 February 2014
- journal article
- Published by Trans Tech Publications, Ltd. in Materials Science Forum
- Vol. 778-780, 855-858
- https://doi.org/10.4028/www.scientific.net/msf.778-780.855
Abstract
We successfully fabricated 13-kV, 20-A, 8 mm × 8 mm, drift-free 4H-SiC PiN diodes. The fabricated diodes exhibited breakdown voltages that exceeded 13 kV, a forward voltage drop of 4.9–5.3 V, and an on-resistance (RonAactive) of 12 mW·cm2. The blocking yield at 10 kV on a 3-in wafer exceeded 90%. We investigated failed devices using Candela defect maps and light-emission images and found that a few devices failed because of large defects on the chip. We also demonstrated that the fabricated diodes can be used in conducting high-voltage and high-current switching tests.Keywords
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