Effect of Current-Spreading Layer Formed by Ion Implantation on the Electrical Properties of High-Voltage 4H-SiC p-Channel IGBTs
- 1 February 2014
- journal article
- Published by Trans Tech Publications, Ltd. in Materials Science Forum
- Vol. 778-780, 1038-1041
- https://doi.org/10.4028/www.scientific.net/msf.778-780.1038