Development of High-Voltage 4H-SiC PiN Diodes on 4° and 8° Off-Axis Substrates
- 1 January 2013
- journal article
- Published by Trans Tech Publications, Ltd. in Materials Science Forum
- Vol. 740-742, 907-910
- https://doi.org/10.4028/www.scientific.net/msf.740-742.907
Abstract
13-kV 4H-SiC PiN diodes were fabricated on 4° and 8° off-axis substrates and their electrical properties were examined. Small test PiN diodes with various JTE concentrations were fabricated and the dependence of JTE concentration was examined. The highest breakdown voltages were 14.6 and 14.1 kV at a JTE1 concentration of 1.9 × 1017 cm−3 for both the 4° and 8° off-axis substrates. Based on the results, 4 mm × 4 mm SiC PiN diodes were successfully fabricated and exhibited avalanche breakdown voltages of 14.0 and 13.5 kV for the 4° and 8° off-axis substrates, respectively. Forward voltage degradation was larger for the 8° off-axis substrates.Keywords
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